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dc.contributor.authorLiu, Shiu-Jenen_US
dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorSu, Shih-Haoen_US
dc.contributor.authorLi, Chia-Hungen_US
dc.contributor.authorCherng, Jyh-Shiarnen_US
dc.contributor.authorHsieh, Jang-Hsingen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:09:48Z-
dc.date.available2014-12-08T15:09:48Z-
dc.date.issued2009-03-02en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3095505en_US
dc.identifier.urihttp://hdl.handle.net/11536/7509-
dc.description.abstractAmorphous InGaZnO(4) (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.en_US
dc.language.isoen_USen_US
dc.titlePhysical properties of amorphous InGaZnO(4) films doped with Mnen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3095505en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue9en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
顯示於類別：期刊論文


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