AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laser

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DC 欄位	值	語言
dc.contributor.author	Huang, S. C.	en_US
dc.contributor.author	Chang, H. L.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Li, A.	en_US
dc.contributor.author	Liu, S. C.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:09:48Z	-
dc.date.available	2014-12-08T15:09:48Z	-
dc.date.issued	2009-03-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00340-008-3346-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7511	-
dc.description.abstract	An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.	en_US
dc.language.iso	en_US	en_US
dc.title	AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00340-008-3346-2	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	94	en_US
dc.citation.issue	3	en_US
dc.citation.spage	483	en_US
dc.citation.epage	487	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
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