利用含硫酸性溶液作銅銦鎵硒吸收層表面鈍化之研究

Abstract

本論文利用大氣電漿輔助化學氣相沉積法去成長不同結晶性硒薄膜於銅鎵銦金屬前驅層上，主要目的為摻氧氣在硒薄膜中，接著在不同壓力下利用兩階段快速高溫製程進行硒化，然後將製作好的銅銦鎵硒薄膜置入化學溶液中，進行表面鈍化的實驗，我們將研究不同硒化壓力和不同種類的化學溶液對銅銦鎵硒薄膜特性的影響。以SEM、XRD和XPS等儀器對薄膜進行表面形貌、晶體結構及表面元素等分析。 接著我們將完成太陽能電池，其結構由上而下依序為鋁指狀電極/氧化鋅鋁/氧化鋅/硫化鎘/銅銦鎵硒/鉬背電極/納鹼玻璃，元件有效面積為0.38平方公分，並利用太陽光模擬系統量測元件效率、開路電壓、短路電流與填充因子等參數。研究結果指出，硒化壓力為500大氣壓下，且利用硫代乙醯胺溶液做表面鈍化的銅銦鎵硒薄膜，製作成太陽能電池後，有著最佳的效率。其元件轉換效率可以達到9.60%。

In this thesis, different crystalline selenium thin films were deposited by atmospheric plasma enhanced chemical vapor deposition on In/Cu3Ga precursor layer. The main purpose of the action is doped with oxygen in selenium thin films. Then under different pressures, selenium-coated metal precursors were formed CIGS thin films using rapid thermal processing (RTP). And then the CIGS thin films were placed into chemical solutions to carry out the experiments of surface passivation. We studied the effects of different pressure of selenization and different type of solutions on CIGS thin film characteristics. SEM was used to observe the film’s morphology, crystalline phase and composition of the CIGS layer were determined by XRD, and XPS was used to analyze the elements composition of the CIGS thin films surface. Afterwards, we completed solar cell, from top to bottom its structure was sequentially Al/AZO/ZnO/CdS/CIGS/Mo/SLG. The effective area of solar cell device was 0.38cm2. And solar spectrum simulate measurement system was used to measure device conversion efficiency, open circuit voltage, short-circuit current and fill factor etc. parameters. The experiment results indicated that the pressure of selenization was 500 torr and then the CIGS thin film was passivated by thioacetamide (TAM) liquid. After the above CIGS thin films were produced solar cell, it had the best conversion efficiency. Its conversion efficiency of 9.60% can be achieved.