Title: Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition
Authors: Kuo, Po-Yi
Chao, Tien-Sheng
Huang, Jyun-Siang
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Keywords: Charge retention;endurance;Ge nanocrystals (Ge-NCs);nonvolatile memory;polycrystalline silicon thin-film transistors (poly-Si TFTs);programming/erasing
Issue Date: 1-Mar-2009
Abstract: We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 degrees C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.
URI: http://dx.doi.org/10.1109/LED.2008.2011145
http://hdl.handle.net/11536/7554
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2011145
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 3
Begin Page: 234
End Page: 236
Appears in Collections:Articles


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