Title: | Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition |
Authors: | Kuo, Po-Yi Chao, Tien-Sheng Huang, Jyun-Siang Lei, Tan-Fu 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
Keywords: | Charge retention;endurance;Ge nanocrystals (Ge-NCs);nonvolatile memory;polycrystalline silicon thin-film transistors (poly-Si TFTs);programming/erasing |
Issue Date: | 1-Mar-2009 |
Abstract: | We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370 degrees C. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future. |
URI: | http://dx.doi.org/10.1109/LED.2008.2011145 http://hdl.handle.net/11536/7554 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2011145 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 3 |
Begin Page: | 234 |
End Page: | 236 |
Appears in Collections: | Articles |
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