1. You are Here：

完整后设资料纪录
DC 栏位值语言
dc.contributor.author吴维纲en_US
dc.contributor.authorWu,Wei-Gangen_US
dc.contributor.author成维华en_US
dc.contributor.author郑时龙en_US
dc.contributor.authorChieng,Wei-Huaen_US
dc.contributor.authorJeng,Shyr-Longen_US
dc.date.accessioned2014-12-12T02:44:22Z-
dc.date.available2014-12-12T02:44:22Z-
dc.date.issued2014en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070151099en_US
dc.identifier.urihttp://hdl.handle.net/11536/75892-
dc.description.abstract了解双脉冲实验架构原理，分析架构中各元件功用，并利用双脉冲实验架构量测交通大学自制氮化镓开关元件动态特性，包括动态切换时间参数和动态切换损失参数，接着透过SPICE模拟软体建立所使用的二极体模型和氮化镓开关模型与模拟双脉冲实验，最后比较双脉冲实验模拟结果与实验开关波形上是否一致。zh_TW
dc.description.abstractThis paper describes the principles of double-pulse tester (DPT) and analyze the function of each component in the architecture. Then, apply the double-pulse tester to measure the dynamic characteristics of the NCTU GaN power transistor ,which include dynamic switching time parameters and dynamic switching loss parameters. Then, use the SPICE simulation software to build the model of diode and GaN power transistor to simulate the double-pulse tester. Finally, compare the result of simulation with experiment and check whether the results are consistent.en_US
dc.language.isozh_TWen_US
dc.subject双脉冲讯号实验架构zh_TW
dc.subject氮化镓zh_TW
dc.subject动态特性zh_TW
dc.subjectdouble-pulse testeren_US
dc.subjectGaNen_US
dc.subjectdynamic characteristicsen_US
dc.title双脉冲实验架构用于氮化镓功率电晶体动态特性量测与模拟zh_TW
dc.titleMeasurement and Simulation of Dynamic Characteristics of GaN Power Transistors by DPTen_US
dc.typeThesisen_US
dc.contributor.department机械工程系所zh_TW
显示于类别：Thesis


Related Contents
Loading...