標題: | 具有動態鋸齒波產生電路以達快速響應之高效率非反向升降壓穩壓器 A High Efficiency Non-inverting Buck-Boost Converter With Dynamic Ramp Generator For Fast Transient Response |
作者: | 杜宸誠 Tu, Chen-Cheng 洪崇智 電機工程學系 |
關鍵字: | 非反向升降壓穩壓器;快速響應;積體化軟啟動電路;Non-inverting Buck-Boost Converter;Fast Transient Response;On-chip Soft-start Circuit |
公開日期: | 2014 |
摘要: | 近年來,可攜式產品成了消費者最受歡迎的商品,而其市佔率也是急速的上升,可以說進入了手持式裝置的時代,而在手持式裝置幾乎都依賴電池的供電下,因此,針對各種電池的供應電壓進行電壓轉換也成了重要的課題,而本研究也致力於實現各種可應用於可攜式產品的直流轉直流轉換電路(DC-DC Converter)。
考量到輸出電壓要能因應不同情況快速回穩以避免造成後端電路誤做動,本論文提出一具有動態鋸齒波產生電路之高效率切換式升降壓穩壓器,所做的改良為將原本固定震幅的鋸齒波產生器電路(Ramp Generator Circuit)加入前授與回授機制,讓鋸齒波可以針對輸出電壓及輸入電壓變化的方向去做出相對應的增減,在輸入比較器與誤差放大器的輸出做比較之後,可以更快速的得到責任週期的變化(Duty Cycle)。
本論文所提出之晶片之輸入電壓範圍從2.5V~5V,輸出電壓將被鎖定在3.3V,最高效率為96%,最大輸出電流為500mA,本論文所呈現之晶片皆使用台積電所提供之0.35微米2P4M 的標準互補式金氧半製程來完成,電路晶片面積為1.647mm×1.506mm。 In recent years, portable products have become the most popular commodity for consumers, so the market share has been rising rapidly. Because handheld devices rely on the battery power, therefore, the voltage conversion for a variety of batteries has become an important issue. This thesis also committed to the various DC-DC converters for portable products. The output voltage might become unstable due to load or supply voltage variations, which might cause abnormal operation or deteriorate the performance of the portable device. This thesis presents a high-efficiency non-inverting buck-boost converter with dynamic ramp generator. We add feed-forward and feedback techniques into the fixed-amplitude ramp generator. Therefore, the amplitude of the ramp signal can change corresponding to the variations of the output voltage and input voltage. Through the comparison between the output voltage and ramp signal, the duty cycle can change rapidly and correspondingly. The output voltage is 3.3 V while the input voltage ranges from 2.5 V to 5 V. The maximum conversion efficiency is 96 % and the maximum load current is 500mA. The chips presented in this thesis were fabricated by Taiwan Semiconductor Manufacturing Company (TSMC)0.35μm 2P4M 3.3V mixed‐signal CMOS process. The chip area is 1.223mm×1.365mm. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070150717 http://hdl.handle.net/11536/76021 |
Appears in Collections: | Thesis |