完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 吳浩偉 | en_US |
dc.contributor.author | Hao-Wei Wu | en_US |
dc.contributor.author | 趙天生 | en_US |
dc.contributor.author | Tien-Sheng Chao | en_US |
dc.date.accessioned | 2014-12-12T02:44:44Z | - |
dc.date.available | 2014-12-12T02:44:44Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT009221543 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/76068 | - |
dc.description.abstract | 在本篇論文中,我們研究在成長閘極氧化層之前利用氣態氫氟酸清洗對pMOSFETs的影響,而除了採用傳統的Cz-wafer,我們還將元件製作在Hydrogen Annealed Wafer (Hi-wafer)來探討與Cz-wafer的差異。我們發現利用氣態氫氟酸清洗可以改善Cz-wafer和氧化層的界面缺陷,進而提昇元件的遷移率及驅動電流,但是氣態氫氟酸清洗對於Hi-wafer卻沒有明顯的改善。此外,由實驗結果發現製作在Hi-wafer上的元件界面缺陷密度會比製作在Cz-wafer上的低。最後,我們利用非晶矽及複晶矽堆疊的結構來製作元件的閘極,結果顯示此種堆疊結構的閘極可以有效的防止硼穿透,進而減少對pMOSFETs介電層的傷害。 | zh_TW |
dc.description.abstract | In this thesis, the effect by using in-situ HF-vapor cleaning before gate oxidation for pMOSFETs on two different silicon substrates – Czochralski grown silicon wafer (Cz-wafer) and hydrogen annealed silicon wafer (Hi-wafer) has investigated. HF-vapor cleaning step can remove native oxide effectively and improve SiO2/Si interface quality. From the results, the drain current, interface-state-density and mobility are improved by HF-vapor cleaning with O2 oxide on Cz-wafer. However, it shows no improvement on Hi-wafer by HF-vapor cleaning. We also found that the interface-state-densities of pMOSFETs on Hi-wafer are lower than Cz-wafer due to the less oxygen impurities. In other words, devices fabricated on Hi-wafer show better interface quality. Finally, we used the stack gate (α-Si 500Å + poly-Si 1500Å) to compare with conventional single poly-Si gate. We found that pMOSFETs with stack gate can effectively suppress boron penetration. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 氣態氫氟酸 | zh_TW |
dc.subject | 堆疊式閘極 | zh_TW |
dc.subject | HF-vapor | en_US |
dc.subject | Hi-wafer | en_US |
dc.subject | Stack gate | en_US |
dc.title | 氣態氫氟酸清洗閘極氧化層及堆疊式閘極在不同晶面上之研究 | zh_TW |
dc.title | In-situ HF-Vapor Cleaning for Gate Oxide and Stack Gate on Different Silicon Substrates | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子物理系所 | zh_TW |
顯示於類別: | 畢業論文 |