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dc.contributor.author吳昱達en_US
dc.contributor.authorWu, Yu-Taen_US
dc.contributor.author劉柏村en_US
dc.contributor.author徐嘉鴻en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorHsu, Chia-Hungen_US
dc.date.accessioned2014-12-12T02:45:00Z-
dc.date.available2014-12-12T02:45:00Z-
dc.date.issued2014en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070150605en_US
dc.identifier.urihttp://hdl.handle.net/11536/76217-
dc.language.isozh_TWen_US
dc.subject銦錫鋅氧化物薄膜電晶體zh_TW
dc.subject通道保護層zh_TW
dc.subjectIn-Sn-Zn-O TFTen_US
dc.subjectpassivationen_US
dc.title應用通道保護層於透明非晶態銦鋅錫氧化物薄膜電晶體技術之研究zh_TW
dc.titleStudy on the effect of channel passivation layer on Transparent Amorphous Indium Zinc Tin Oxide thin film transistorsen_US
dc.typeThesisen_US
dc.contributor.department顯示科技研究所zh_TW
顯示於類別:畢業論文