電漿子強化矽場效電晶體之遠距庫倫效應

Abstract

近年來元件為了提升特性與整合微縮到極小的尺寸，伴隨著電子遷移率的降低與產生了許多困難複雜的機制。根據之前研究的實驗中得知，電漿子造成在長通道極薄氧化層場效電晶體內n型多晶矽閘極的遠距庫倫效應，以及源極/汲極電漿子造成短通道場效電晶體的電子遷移率衰減。因此我們建立了兩個準則作為觀察電漿子產生遠距庫倫效應所需的條件，唯有滿足此條件下才能使得遠距庫倫效應被觀察到。我們比較了關於遠距庫倫效應的實驗，並利用兩個準則去驗證，發現對於長通道極薄氧化層場效電晶體內n型多晶矽閘極及短通道場效電晶體的源極/汲極內的電漿子都能應用且證實了它的有效性。此外我們利用馬西森法及溫度關係分離短通道下源極/汲極內的電漿子引致遷移率，電子遷移率隨著通道長度縮短而減少，可見源極/汲極內的電漿子的影響更嚴重。理論方面的證據還包含了實驗得到的轉導值。

Recently, Si MOSFETs are aggressively shrunk to nanometer size to boost device performance and integration. Accompanied mobility degradations are too complicated to deal with. Based on our previous work on experimentally probing surface plasmons in ultrathin gate oxide n+ poly-Si nMOSFET, we have established the evidence of the long-range Coulomb interaction. In this thesis, we further put forward the two criteria of observing plasmons enhanced Coulomb drag and will confirm it with extra drag experiments. In addition, we will use Matthiessen’s rule and a temperature dependent method to separate source/drain limited mobility. Mobility degradation in short-channel device reveals the strength of source/drain plasmons increasing with decreasing channel length. Experimental transconductance is also presented for the corroborating evidence.