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dc.contributor.authorChen, Jun-Rongen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWu, Yung-Chien_US
dc.contributor.authorLin, Shiang-Chien_US
dc.contributor.authorLiu, Wei-Reinen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.contributor.authorKuo, Chien-Chengen_US
dc.contributor.authorLee, Cheng-Chungen_US
dc.date.accessioned2014-12-08T15:10:00Z-
dc.date.available2014-12-08T15:10:00Z-
dc.date.issued2009-02-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3079398en_US
dc.identifier.urihttp://hdl.handle.net/11536/7639-
dc.description.abstractWide-band gap ZnO semiconductors are attractive materials for the investigation of microcavity exciton polaritons due to the large exciton binding energy and oscillator strength. We report the growth and characterization of bulk ZnO-based hybrid microcavity. The phenomenon of strong exciton-photon coupling at room temperature has been observed in the ZnO-based hybrid microcavity structure, which consists of 30 pair epitaxially grown AlN/AlGaN distributed Bragg reflector (DBR) on the bottom side of the 3/2 lambda thick ZnO cavity and 9 pair SiO(2)/HfO(2) DBR as the top mirror. The cavity quality factor is about 221. The experimental results show good agreement with theoretically calculated exciton-polariton dispersion curves based on transfer matrix method. From the theoretical and experimental exciton-polariton dispersion curves with two different cavity-exciton detuning values, the large vacuum Rabi splitting is estimated to be about 58 meV in the ZnO-based hybrid microcavity.en_US
dc.language.isoen_USen_US
dc.subjectaluminium compoundsen_US
dc.subjectbinding energyen_US
dc.subjectdistributed Bragg reflectorsen_US
dc.subjectepitaxial growthen_US
dc.subjectexcitonsen_US
dc.subjectgallium compoundsen_US
dc.subjecthafnium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectintegrated opticsen_US
dc.subjectmicrocavitiesen_US
dc.subjectoscillator strengthsen_US
dc.subjectpolaritonsen_US
dc.subjectsemiconductor growthen_US
dc.subjectsilicon compoundsen_US
dc.subjectspin-orbit interactionsen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titleLarge vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3079398en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000263409400003-
dc.citation.woscount20-
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