Full metadata record
DC FieldValueLanguage
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorChang, Ting-en_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorChiang, Cheng-Nengen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:10:01Z-
dc.date.available2014-12-08T15:10:01Z-
dc.date.issued2009-02-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3080201en_US
dc.identifier.urihttp://hdl.handle.net/11536/7640-
dc.description.abstractIn this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.en_US
dc.language.isoen_USen_US
dc.subjectaggregates (materials)en_US
dc.subjectGe-Si alloysen_US
dc.subjectnanostructured materialsen_US
dc.subjectnickel alloysen_US
dc.subjectnucleationen_US
dc.subjectRaman spectraen_US
dc.subjectrandom-access storageen_US
dc.subjectthin filmsen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleNiSiGe nanocrystals for nonvolatile memory devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3080201en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000263409400050-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. 000263409400050.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.