藉由油氣控制成長單層和多層石墨烯於二氧化矽基板

Abstract

石墨烯為碳的單原子層，具有電子遷移率高、透光性佳、高導熱性、機械強度強等優異特性，是一種極有潛力的前瞻性材料。化學氣相沉積法因能夠大面積生長石墨烯，為成長石墨烯主流成長方法。但以化學氣相沉積法成長石墨烯必須將其成長於金屬基板上，故在電子元件等應用上需要經過一道轉移手續，但是轉移過程一直存在聚合物殘留、微結構破壞等問題，故轉移流程的改進與直接成長的技術亦為現在持續發展的議題。 本實驗提出一種不同的直接成長方式，利用本實驗室特殊的油氣式成長石墨烯方法，將單層石墨烯成長於二氧化矽基板上；並藉由油氣的控制直接成長多層石墨烯成長於二氧化矽基板上，達到石墨烯層數控制的目標。除此之外，本篇文章亦對於其直接成長之機制做了探討，提供了繼續研究及改變之依據。若能將殘存銅、基板鍵結及均勻度等問題解決，此方法將會是石墨烯成長之一大進展。

Graphene is a 1-dimentional hexagonal configuration of carbon atoms. It becomes a popular material for electronic applications because of its excellent properties, such as high carrier mobility and high transparency. Chemical vapor deposition (CVD) is the most promising method for graphene preparation due to large-area and uniform synthesis, which usually synthesize graphene on metal substrates. The wet transfer process is required for further applications. However, the transfer process has the issueses of PMMA residue and structural damage. Improvement in transfer process and develop of graphene direct growth are required. In this work, a new method for graphene direct growth is proposed by a CVD system with hydrocarbon source. Single-layer and multi-layer graphene films are synthesized on silica substrate directly by controlling hydrocarbon. The growth mechanism is investigated. Based on this method, graphene direct growth on dielectric substrates can be achieved.