1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.author林盈秀en_US
dc.contributor.author謝文峰en_US
dc.date.accessioned2014-12-12T02:46:22Z-
dc.date.available2014-12-12T02:46:22Z-
dc.date.issued2004en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009224534en_US
dc.identifier.urihttp://hdl.handle.net/11536/76727-
dc.description.abstract在本論文中，我們比較由金屬有機化學氣相沈積法(MOCVD)成長的砷化銦鎵和氮砷化銦鎵單層量子井的超快載子動力學。從螢光光譜的量測，我們可以發現氮砷化銦鎵的能隙因為氮的加入比砷化銦鎵的能隙小很多，可以發出波長為1.3μm 的光。我們利用飛秒時析反射量測研究載子的鬆弛過程。比較這兩個樣品的量測結果，我們發現在氮砷化銦鎵的載子生命期比在砷化銦鎵的短。這可能是因為載子鬆弛過程中，載子被加入氮所造成的缺陷捕捉所導致。zh_TW
dc.description.abstractThe comparative analysis of the ultrafast carrier dynamics of metal-organic chemical vapor deposition (MOCVD) grown In0.4Ga0.6As and In0.4Ga0.6As0.995N0.005 single quantum wells (SQW) is reported. From photoluminescence (PL) measurement we conclude that the incorporation of a low content N in InGaAsN reduces the band-gap energy significantly and allows emission wavelengths shift to 1.3 μm. Carrier dynamics were investigated by femtosecond time-resolved photoreflectance measurement at 800 nm with various pump intensities. Comparison with these two samples indicates that the carrier relaxation in the In0.4Ga0.6As0.995N0.005 SQW is dominated by defect traps associated with the N incorporation.en_US
dc.language.isozh_TWen_US
dc.subject超快zh_TW
dc.subject氮砷化鎵zh_TW
dc.subject時間解析zh_TW
dc.subjectultrafasten_US
dc.subjectInGaAsNen_US
dc.subjecttime-resolveden_US
dc.title超快時間解析反射技術研究氮砷化銦鎵單層量子井zh_TW
dc.titleThe ultrafast time-resolved measurements of InGaAs1-xNx single quantum wellsen_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
Appears in Collections:Thesis


Files in This Item:

  1. 453401.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...