Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, M. F.en_US
dc.contributor.authorLee, P. T.en_US
dc.contributor.authorMcAlister, S. P.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:10:04Z-
dc.date.available2014-12-08T15:10:04Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.2010416en_US
dc.identifier.urihttp://hdl.handle.net/11536/7680-
dc.description.abstractPentacene organic thin-film transistors (OTFTs) with a high-k HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm(2)/V . s at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.en_US
dc.language.isoen_USen_US
dc.subjectFlexibleen_US
dc.subjectHfLaOen_US
dc.subjecthigh-kappaen_US
dc.subjectorganic thin-film transistors (OTFTs)en_US
dc.subjectpentaceneen_US
dc.titleSmall-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2008.2010416en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue2en_US
dc.citation.spage133en_US
dc.citation.epage135en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262861600012-
dc.citation.woscount36-
Appears in Collections:Articles


Files in This Item:

  1. 000262861600012.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.