Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

doi:10.1109/LED.2008.2010416

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, M. F.	en_US
dc.contributor.author	Lee, P. T.	en_US
dc.contributor.author	McAlister, S. P.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:10:04Z	-
dc.date.available	2014-12-08T15:10:04Z	-
dc.date.issued	2009-02-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2008.2010416	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7680	-
dc.description.abstract	Pentacene organic thin-film transistors (OTFTs) with a high-k HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm(2)/V . s at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	Flexible	en_US
dc.subject	HfLaO	en_US
dc.subject	high-kappa	en_US
dc.subject	organic thin-film transistors (OTFTs)	en_US
dc.subject	pentacene	en_US
dc.title	Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2008.2010416	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	2	en_US
dc.citation.spage	133	en_US
dc.citation.epage	135	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000262861600012	-
dc.citation.woscount	36	-
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