矽晶圓製程不同監控法品質成本之比較研究

Abstract

自從IC發明以來，IC產業的發展一日千里，至今依然蓬勃且持續地為世界帶來改變。矽晶圓是IC產業最重要原料之一，矽晶圓製造已是成熟的產業，以目前產品的品質水準而言，各家製造商的產品可相互替代。因此在全球化的競爭下，面臨”微利化”的趨勢，降低成本已成為維持競爭力的最重要課題。矽晶圓加工製程使用破壞性的方式進行表面金屬污染檢測，因此無法百分之百全檢，多以統計製程管制方法來監控其水準。本研究就分別法、合併法、與加速法三種監控方式，建立三者間品質成本差異的模式，幫助管理者選擇相同品質水準下，品質成本最低的監控方法。另外探討在不同的異常頻率下，選擇品質成本最低的監控方法。最後，本研究以T公司的相關數據作為實例，得出結果並做成建議，提供矽晶圓製造業參考，幫助選擇最適當的監控法，達成降低成本的目的。

Integrated circuit virtually created the foundation for the entire field of modern microelectronics. Silicon wafer is one of the most important raw materials for IC. Silicon wafer manufacturing is a mature industry and there are around 10 vendors in the world. Each vendor’s wafer has similar quality level for IC Fab and there is almost no barrier for vendor replacement. Under the globalize competition and in the trend of micro profit, cost reduction is a key factor for silicon wafer suppliers. In silicon wafer manufacturing process, the surface metallic contamination analysis is a destructive inspection. Therefore, 100% inspection is impossible and statistical process control is a suitable tool for process monitoring. By comparing the different items of quality costs among three kinds of SPC monitoring method, this study establishes formulas for quality cost difference. It is also discussed which methods has the lowest quality cost while the abnormality frequency changed. Finally, this study practically applies related data from T Company to those formulas. The result can be a reference for silicon wafer manufacturing industry to select method with lowest quality cost.