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dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorLi, Y. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorLee, W. C.en_US
dc.contributor.authorLee, Y. J.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorKwo, J.en_US
dc.date.accessioned2014-12-08T15:10:10Z-
dc.date.available2014-12-08T15:10:10Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cg8003849en_US
dc.identifier.urihttp://hdl.handle.net/11536/7762-
dc.description.abstractHigh-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y(2)O(3) buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y(2)O(3) follows (0001)< 2 (1) over bar(1) over bar0 >(ZnO)parallel to(111)< 10 (1) over bar > Y(2)O(3). ZnO lattice aligns with the hexagonal O sublattice in Y(2)O(3) and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {11 (2) over bar0} planes matching 6 or 7 {4 (4) over bar0} planes Of Y(2)O(3) and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 mu m from photoluminescence results.en_US
dc.language.isoen_USen_US
dc.titleDomain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y(2)O(3) Buffer Layer on Si (111)en_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cg8003849en_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume9en_US
dc.citation.issue1en_US
dc.citation.spage239en_US
dc.citation.epage242en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Articles