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dc.contributor.authorTsai, W. -C.en_US
dc.contributor.authorLin, J. -C.en_US
dc.contributor.authorHuang, K. -M.en_US
dc.contributor.authorYang, P. -Y.en_US
dc.contributor.authorWang, S. -J.en_US
dc.date.accessioned2014-12-08T15:10:11Z-
dc.date.available2014-12-08T15:10:11Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn0295-5075en_US
dc.identifier.urihttp://dx.doi.org/10.1209/0295-5075/85/27002en_US
dc.identifier.urihttp://hdl.handle.net/11536/7769-
dc.description.abstractIn this study, the white-light emissions, including red, green and blue colors, appearing on the same porous silicon samples are originally introduced by a thermal-annealing method. The SEM, FTIR, and PL are discussed for different annealing temperature cases. The FTIR is used to monitor the chemical bonding structures of the PS samples under different annealing temperatures. The results show that the variation of chemical bonding relates to the variation of the emission wavelength. The emission intensities of the blue-green-light components are enhanced with the increase of annealing temperature. The PL spectra cover the entire visible region under the excitations of He-Cd laser beam, and a strong white-light emission can be observed by the naked eye at room temperature. Copyright (C) EPLA, 2009en_US
dc.language.isoen_USen_US
dc.titleWhite-light emissions from p-type porous silicon layers by high-temperature thermal annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1209/0295-5075/85/27002en_US
dc.identifier.journalEPLen_US
dc.citation.volume85en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000263692900026-
dc.citation.woscount7-
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