标题: | 离子感测场效电晶体对于温度及闸极电压应力调变之可靠度研究 The study of ISFET’s reliability with temperature and gate voltage stress modulation |
作者: | 黄明钦 Ming-Chin Huang 张国明 苏朝琴 Kow-Ming Chang Chau-Chin Su 电机学院电机与控制学程 |
关键字: | 温度;闸极电压;迟滞;飘移;再现性;离子感测场效电晶体;temperature;gate voltage;hysteresis;drift;repeatable use;ISFET |
公开日期: | 2007 |
摘要: | 离子感测场效电晶体最初是由P.Bergveld在1970年代所提出来的一种化学感测器,主要是利用金属半导体场效电晶体(MOSFET)的原理,ISFET与MOSFET不同的是将离子感应层(Ion Sensitive Layer) 、酸硷缓冲溶液(pH Buffer Solutions) 和一外加之参考电极取代MOSFET之金属闸极,ISFET的电性特性将会随着离子感应层与溶液的表面接触性质而改变。 此研究是以四种与CMOS制程相容的材料作为闸极感应层对于标准溶液进行探讨。元件的所有制程均在国家奈米实验室与国立交通大学奈米中心的一万级无尘室中进行与完成。所有量测过程是利用HP4156仪器并且在黑箱中进行。在不同的温度条件下对于不同缓冲溶液的pH值测其汲极电流与闸极电压的曲线,藉由不同的汲极电流与闸极电压曲线来定义灵敏度。为了寻求最佳的稳定条件,使用闸极电压调变量来找出可靠度与酸离子之间的关系。 此篇论文将详述离子感测器的制作流程及量测条件。在本研究里有四个研究项目,温度变化下的灵敏度、闸极对电压应力调变的影响、温度的迟滞效应以量测再现性。 The ion-sensitive field effect transistor (ISFET) is a chemical sensor that was first presented by P. Bergveld in 1970. The main point is used Metal Oxide Silicon Field Effect Transistor (MOSFET) principium. The ISFET is different with MOSFET on the metal gate of MOSFET which was replaced by an ion-sensitive layer, buffer solutions, and an additional reference electrode. The electrical characteristics of ISFETs will vary with the interface reactions of sensing layer and electrolyte solution. In this study, four CMOS fabrication compatible membranes were used to be the sensing layers on ISFETs. All processes of the devices were completed in the clean room (class 10000) of NDL and NFC in NCTU. All measuring processes was in a dark box using HP4156A semiconductor parameter analyzer. The devices were soaked in buffer solutions to get the ID_VG curves with varied temperatures and pHs. The sensitivities were defined by the disparities of ID_VG curves. In order to seek the optimum stabilization conditions, a gate voltage stress modulation was used to find the relations of reliability and acid ion. In this thesis, we will describe details on fabrication process flow and measurement conditions. In this study, there are four researches in sensitivities of varies temperature, the effects of gate voltage stress modulation, hysteresis of temperature, and repeatable use. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009267554 http://hdl.handle.net/11536/77742 |
显示于类别: | Thesis |
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