高頻元件之金凸塊覆晶製程接合最佳化參數研究

Abstract

熱壓超音波覆晶接合製程為金/金(Gold/Gold)的直接接合技術，因此介面具有較佳的接合強度、電性及可靠度，同時具備製程簡單、無鉛及無助溶劑污染的優點；此外熱壓超音波可在較低的溫度、壓力及短接合時間下進行接合，因此對高頻元件有最低的熱傷害及具有低成本的特點，未來將可滿足通訊元件大量生產需求。本論文詳述覆晶封裝製程，分別討論在氧化鋁基板上製作球形金凸塊與電鍍金凸塊的作法，然後將製作完成的高頻元件晶片與金凸塊的基板，以熱壓超音波覆晶接合設備接合。探討於GGI (Gold-Gold Interconnection)製程技術上之製程條件之關鍵因素：接合溫度、時間與壓力，分析金凸塊在不同溫度與製程時間及壓合力量下對覆晶結構強度影響，並討論最佳化實驗製程參數。

Thermo sonic flip chip technology is gold to gold interconnection(GGI); Therefore The interface possesses advantages such as better bond strength, electric characterize and reliability, simple process, leadless, non solution contamination as well , Besides, Thermo sonic can be interconnected under low temperature, pressure, and time, and it has potential to lower the cost and to proceeds easily, thus in the future, mass production need of communication can be fulfilled, This paper describes about flip chip package process, and discusses about the processes of stud bump and plating bump individually. Then high frequency device made and substrate of gold bump are of interconnection by thermo sonic flip chip device. The key factors to process parameter discussed in GGI process technology are bond temperature, time, and pressure. The paper also analyzes the influence of flip chip gold bump on structure strength under different bond temperature, time, and pressure, and talks over the optimization of experiment process parameter.