選擇性磊晶成長在升高式源/汲極應用之研究

Abstract

金屬氧化物半導體元件的製造技術必須不斷的突破，才能解決元件尺寸縮小所面臨越來越嚴重的短通道效應。選擇性磊晶成長製程，應用於升高式的源/汲極，可以有效地改善短通道效應。本論文研究的目標，就是在研究選擇性的磊晶製程，與升高式源/汲極的元件特性。先以TCAD 模擬一般元件與升高式源/汲極元件，N型與P型雜質摻雜的分佈，Vt Roll-off 以及DIBL等短通道效應的比較，再以兩種選擇性磊晶製程做出升高式源/汲極元件，以SIMS、TEM來觀察磊晶製程結果，並且量測元件來比較元件電性。驗證了選擇性磊晶製程應用於升高式的源/汲極元件的可行性，並且使短通道效應得到大幅改善。相信此技術對於半導體元件的持續微縮會有重大的貢獻。

As the metal-oxide-semiconductor device dimension shrinking, engineers need to develop breakthrough technologies to fix the more and more serious short channel effects. The selective epitaxial growth applied on the raised source/drain is an effective method to alleviate the short channel effects. This study mainly focuses on the process of the selective eptaxial growth and the device characteristics of the raised source/drain. First, we simulated the N and P doping profiles, Vt Roll-off and DIBL conditions on raised source/drain and traditional devices. Then, we processed selective epitaxial growth to form raised source/drain devices by two approaches. In the experiment results analysis, SEM, TEM and SIMS were adopted for the physical performance of the process. And, the device characteristcs were tested by electrical probes to compare the electrical performance. This study has proved that the selective eptaxial growth for raised source/drain is a feasible method and it improves the device performance in the short channel behaviors. This technology will play an important role in the nano device era.