應用於超寬頻3.1-10.6GHz無線接收端之疊接回授架構與低功率電流再使用架構之低雜訊放大器之設計

Abstract

本論文研製一個應用於超寬頻3.1-10.6 GHZ的低雜訊放大器是採用電阻-電容疊接回授架構分別為回授1與回授2，以及低功率高增益的電流再使用架構。本研究是以0.18微米互補式金氧半製程實現。在回授1架構中，所量測到的平均順向增益為5dB，逆向隔離為-32dB以下，S11為-7.5dB以下，S22約為-10dB以下，而平均雜訊指數約為8dB。在回授2架構中，所量測到的平均順向增益為9dB，逆向隔離為-45dB以下，S11為-7.2dB以下，S22約為-8.2dB以下，而平均雜訊指數約為5.5dB。回授1與回授2架構均消耗功率18mW。在電流再使用架構中，所量測到的平均順向增益為9dB，逆向隔離為-50dB以下，S11為-8.6dB以下，S22約為-8dB以下，而平均雜訊指數約為5.2dB。此電路消耗功率僅為9.4mW。

A 3.1-10.6GHz low noise amplifier is applied for ultra-wideband, it introduces by the cascode R-C feedback in feedback1 and feedback2 structure and a low power, high gain current-reused structure. This research is fabricated in 0.18-μm CMOS process. In feedback1 structure, the average forward S21 is 5dB, the reverse isolation S12 is under -32dB, the S11 is under -7.5dB, the S22 is under -10dB, and the noise figure is 8dB. In feedback2 structure, the average forward S21 is 9dB, the reverse isolation S12 is under -45dB, the S11 is under -7.2dB, the S22 is under -8.2dB, and the noise figure is 5.5dB. They all consume 18mW. In current-reused structure, the average forward S21 is 9dB, the reverse isolation S12 is under -50dB, the S11 is under -8.6dB, the S22 is under -8dB, and the noise figure is 5.2dB. The circuit power consumption is only 9.4mW.