超薄雙閘極金氧半場效電晶體與矽奈米線電晶體涵蓋通道背向散射效應之物理解析模型

Abstract

根據通道背向散射效應的基本理論，其物理解析式模型主要是建立在源極到通道的能障頂端上的kBT layer內。經由利用一維Schrödinger和Poisson模擬，再透過不同結構模型的運算，可驗證此模型之正確性；或者利用Monte Carlo原理去模擬在不同條件下之電子束反射與透射的關係，亦可做為檢驗此模型之依據。此論文將分別針對超薄雙閘極金氧半場效電晶體和矽奈米線電晶體的模型來做模擬分析與比較，並且得出合理的結果。

According to the fundamental theory of the channel backscattering, a physically based analytic model is established in the kBT layer at the peak of the source-channel barrier. By using the 1-D Schrödinger-Poisson simulation and the evaluations of the underlying different structures, the validity of the model can be corroborated. Simulation for the forward and backward flux relation under different conditions by the Monte Carlo technique can also confirm the validity of the model. In this thesis, a series of physically-based analytic models applied to ultra-thin double-gate MOSFETs and silicon nanowire transistors are analyzed and testified. The reasonable results are achieved.