背向散射理論應用於金氧半場效電晶體在飽和區不匹配效應之物理模型

Abstract

本論文研究金氧半場效電晶體在過臨界區的不匹配效應以及利用背向散射理論推導出一個物理模型。我們首先量測各種不同尺寸的電晶體，並且在飽和區計算其匹配誤差。我們發現隨著閘極電壓的增大，電流的誤差會逐漸變小。接著我們考慮背向散射理論的三個參數，背向散射係數, 臨界電壓, 以及汲極電壓導致位障下降, 組成一個以這三個參數為變數的函數來計算電流的不匹配效應。

This thesis investigates the current mismatch in above-threshold regions and derives a physical mismatch model based on backscattering theory. We have extensively characterized measured MOSFETs in above-threshold regions with different gate widths and lengths to determine the current mismatch. We have observed that the current mismatch decreases with increasing gate voltage. We have also derived a backscattering based mismatch model with three key parameters, drain-induce-barrier-lowering (DIBL), quasi-equilibrium threshold voltage Vtho, and backscattering coefficient rC. We can calculate the current mismatch in above-threshold regions by using the new mismatch model.