單晶片溫度感測器的高線性度參考電壓

Abstract

高線性度電壓參考電路以TSMC 0.13μm 及TSMC 0.18μm 複合式金氧 矽製程來設計及實現。先前研究已經提出在傳統上正比絕對溫度的電路裡，金氧矽電晶體操作在弱反轉區可以用來取代雙極性裝置。然而這樣的方法，在現今深次微米及奈米複合式金氧矽技術下，常因元件的漏電流效應，使得在高溫時會有線性度之問題。本論文所提出的電路，利用溫度補償技術用在正比絕對溫度及與絕對無度無關這兩個參考電壓下，來加強線性度並產生一個較為穩定的無關溫度之參考電壓。模擬結果中，在55°C 到170°C 的溫度範圍下，R-quares 都可達到0.999 以上。此論文設計了一個溫度範圍廣的溫度感測器，並且能夠容易整合於現今的系統晶片設計之中。

High linear voltage references circuitry is designed and implemented in TSMC 0.13μm and 0.18μm CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in conventional PTAT(proportional to absolute temperature) circuits. However such solutions often have linearity problem in high temperature region due to the current leaking devices in modern deep sub micron and nano-scale CMOS technology. The proposed circuit utilized temperature complementation technique on two voltage references, PTAT and IOAT (independent of absolute temperature) references, to enhance the linearity and produce a more stable IOAT voltage reference. Base on the simulation results, the R-squares of both circuitries are better than 0.999 in a considerable wider temperature range from -55°C to 170°C. Thus, a fully integrated temperature sensor with wider temperature range is designed and easily to integrate to modern system-on-chip designs with minimal efforts.