Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

Title:	Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
Authors:	Ling, Hong-Shi Wang, Shiang-Yu Lee, Chien-Ping Lo, Ming-Cheng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices
Issue Date:	1-Jan-2009
Abstract:	We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
URI:	http://dx.doi.org/10.1109/LPT.2008.2009130 http://hdl.handle.net/11536/7849
ISSN:	1041-1135
DOI:	10.1109/LPT.2008.2009130
Journal:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	21
Issue:	1-4
Begin Page:	118
End Page:	120
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.