标题: | Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K |
作者: | Ling, Hong-Shi Wang, Shiang-Yu Lee, Chien-Ping Lo, Ming-Cheng 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices |
公开日期: | 1-一月-2009 |
摘要: | We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time. |
URI: | http://dx.doi.org/10.1109/LPT.2008.2009130 http://hdl.handle.net/11536/7849 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2008.2009130 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 21 |
Issue: | 1-4 |
起始页: | 118 |
结束页: | 120 |
显示于类别: | Articles |
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