标题: Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
作者: Ling, Hong-Shi
Wang, Shiang-Yu
Lee, Chien-Ping
Lo, Ming-Cheng
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices
公开日期: 1-一月-2009
摘要: We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al(0.3)Ga(0.7)As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In(0.15)Ga(0.85)M DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
URI: http://dx.doi.org/10.1109/LPT.2008.2009130
http://hdl.handle.net/11536/7849
ISSN: 1041-1135
DOI: 10.1109/LPT.2008.2009130
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 1-4
起始页: 118
结束页: 120
显示于类别:Articles


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