The crystallization mechanism of poly-Si thin film using high-power Nd : YAG laser with Gaussian beam profile

Abstract

This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm(2)/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.