Impedance Spectroscopy of CaCu(3)Ti(4)O(12) Films Showing Resistive Switching

doi:10.1149/1.3111882

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Shen, Yu-Shu	en_US
dc.contributor.author	Ho, Chia-Cheng	en_US
dc.contributor.author	Chiou, Bi-Shiou	en_US
dc.date.accessioned	2014-12-08T15:10:19Z	-
dc.date.available	2014-12-08T15:10:19Z	-
dc.date.issued	2009-01-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.3111882	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7883	-
dc.description.abstract	CaCu(3)Ti(4)O(12) (CCTO), for resistance random access memory (RRAM) application, was prepared by the sol-gel method. Our preliminary study indicates that CCTO possesses the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films were investigated. The impedance spectroscopy was applied to CCTO films during the switching cycle. Based on the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original, ON, and OFF states were explored.	en_US
dc.language.iso	en_US	en_US
dc.title	Impedance Spectroscopy of CaCu(3)Ti(4)O(12) Films Showing Resistive Switching	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.3111882	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	156	en_US
dc.citation.issue	6	en_US
dc.citation.spage	H466	en_US
dc.citation.epage	H470	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Innovative Packaging Research Center	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Innovative Packaging Research Center	en_US
顯示於類別：	期刊論文