Mg4Nb2O9相陶瓷填入對低溫共燒陶瓷基板之影響研究

Abstract

本研究將Mg4Nb2O9陶瓷加入商用玻璃ZnO–B2O3–SiO2 (GP5210) 及 B2O3–SiO2 (GA50)之中，開發低溫共燒陶瓷基板材料，研究陶瓷加不同玻璃配比之玻璃，在875℃下燒結，對其微波介電性質的影響，並歸納出具有最佳介電特性之混合比例。 研究發現當陶瓷加入80wt% GA50，在875℃燒結後沒有新相生成，主相仍為陶瓷相，在此配比可得到最佳緻密化程度及介電特性：εr = 4.5，Q = 1788 (9 GHz) ，τf = -16.9 ppm/℃。而將陶瓷加入80wt% GP5210，在875℃燒結後陶瓷與玻璃反應產生結晶相，出現超晶格有序結構，此有助於品質因子之提升；在此配比可得最佳緻密化程度及最佳介電特性：εr = 6.6，Q = 2856(9 GHz) ，τf = -16.7 ppm/℃。 基於微波介電特性考量，兩種玻璃均選擇陶瓷+80wt%玻璃進行低溫共燒基板研究。以於Open Resonator法量測基板燒結後之介電特性，陶瓷加80wt%GA50玻璃之εr = 4.3，Q = 12388(15 GHz)；陶瓷加80wt%GP5210玻璃之εr = 6.6，Q = 19532 (15 GHz)。

In this study, two commercial glass, ZnO–B2O3–SiO2 (NEG Ltd., GP5210) and B2O3–SiO2 (NEG Ltd., GA50), were used to improve the sintering and dielectric property of Mg4Nb2O9 ceramic. The interaction between GP5210 and Mg4Nb2O9 resulted in the crystallization phase and superlattice structure. Further investigations indicated that the superlattice structure had greatly contributed to the microwave dielectric property. The optimized microwave dielectric properties of Mg4Nb2O9 /80wt % GP5210 were εr = 6.63, Q = 2855.9(9 GHz), τf = -16.72 ppm/℃.Compared to GP5210 / Mg4Nb2O9, there was no interaction between GA50 and Mg4Nb2O9. The optimized microwave dielectric properties of Mg4Nb2O9 / 80wt%GA50 were εr = 4.45，Q = 1788.4(9 GHz) ，τf = -16.89 ppm/℃. The optimized microwave dielectric properties of the LTCC Tape for B2O3–SiO2 glass system were εr = 4.253，Q = 12388.3 (15 GHz), and for ZnO–B2O3–SiO2 glass system were εr = 6.627, Q=19531.5 at 15GHz by Open Reasonator. The low-temperature sintering tape had appreciate dielectric properties, therefore, were suitable for LTCC application.