ZnSnO3薄膜光電性質研究

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DC Field	Value	Language
dc.contributor.author	游家鑑	en_US
dc.contributor.author	Chia-Chien Yu	en_US
dc.contributor.author	莊振益	en_US
dc.contributor.author	Jenh-Yih Juang	en_US
dc.date.accessioned	2014-12-12T02:56:16Z	-
dc.date.available	2014-12-12T02:56:16Z	-
dc.date.issued	2005	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT009321540	en_US
dc.identifier.uri	http://hdl.handle.net/11536/78982	-
dc.description.abstract	本論文研究的是ZnSnO3透明半導體薄膜的光電性質且以脈衝雷射蒸鍍成功地在Sapphire(0001)鍍出ZnSnO3。並分別改變鍍膜氧壓和溫度，嘗試作出電阻率低且高透光率的薄膜。由XRD圖發現，隨著溫度提高，繞射峰將往大角度移動，顯示溫度提高將使晶格常數變小。將鍍膜溫度提高至600℃以上改善了薄膜的電阻率且電阻率大約在10-1 Ω-㎝且最大載子遷移率為19㎝2V-1s-1。當鍍膜溫度在500℃以上，在可見光區範圍內，透光率將可達85%以上。由穿透頻譜不僅可以知道可見光區的高透光率且可知能隙值大於4.1eV。	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氧化鋅錫	zh_TW
dc.subject	光電	zh_TW
dc.subject	薄膜	zh_TW
dc.subject	ZnSnO3	en_US
dc.subject	Electro-Optical	en_US
dc.subject	Thin Films	en_US
dc.title	ZnSnO3薄膜光電性質研究	zh_TW
dc.title	The Study on the Electro-optical Properties of ZnSnO3 Thin Films	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子物理系所	zh_TW
Appears in Collections:	Thesis

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