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dc.contributor.author游家鑑en_US
dc.contributor.authorChia-Chien Yuen_US
dc.contributor.author莊振益en_US
dc.contributor.authorJenh-Yih Juangen_US
dc.date.accessioned2014-12-12T02:56:16Z-
dc.date.available2014-12-12T02:56:16Z-
dc.date.issued2005en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009321540en_US
dc.identifier.urihttp://hdl.handle.net/11536/78982-
dc.description.abstract本論文研究的是ZnSnO3透明半導體薄膜的光電性質且以脈衝雷射蒸鍍成功地在Sapphire(0001)鍍出ZnSnO3。並分別改變鍍膜氧壓和溫度,嘗試作出電阻率低且高透光率的薄膜。由XRD圖發現,隨著溫度提高,繞射峰將往大角度移動,顯示溫度提高將使晶格常數變小。將鍍膜溫度提高至600℃以上改善了薄膜的電阻率且電阻率大約在10-1 Ω-㎝且最大載子遷移率為19㎝2V-1s-1。當鍍膜溫度在500℃以上,在可見光區範圍內,透光率將可達85%以上。由穿透頻譜不僅可以知道可見光區的高透光率且可知能隙值大於4.1eV。zh_TW
dc.language.isozh_TWen_US
dc.subject氧化鋅錫zh_TW
dc.subject光電zh_TW
dc.subject薄膜zh_TW
dc.subjectZnSnO3en_US
dc.subjectElectro-Opticalen_US
dc.subjectThin Filmsen_US
dc.titleZnSnO3薄膜光電性質研究zh_TW
dc.titleThe Study on the Electro-optical Properties of ZnSnO3 Thin Filmsen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
Appears in Collections:Thesis


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