標題: Enhancement of Stress-Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering
作者: Lu, Tsung Yi
Wang, Chin Meng
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: CMOS integrated circuits;electron mobility;elemental semiconductors;hot carriers;MOSFET;reliability;silicon
公開日期: 2009
摘要: An enhanced stress memorization-technique that utilizes a strain proximity free technique (SPFT) and a stacked-gate structure has been demonstrated by multiple strain-gate engineering. The electron mobility of n-channel metal-oxide semiconductor field effect transistors (nMOSFETs) with SPFT exhibit a 16% increase compared to that of counterpart techniques. SPFT avoids the limitation of stressor volume for performance improvement in high-density complementary metal oxide semiconductor circuits. We also found that optimization of stacked, random poly-Si-grain gate structure in combination with SPFT can improve mobility further to 22% more than a single poly-Si gate structure without SPFT.
URI: http://hdl.handle.net/11536/7909
http://dx.doi.org/10.1149/1.3005556
ISSN: 1099-0062
DOI: 10.1149/1.3005556
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 1
起始頁: H4
結束頁: H6
Appears in Collections:Articles