完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Hsieh, Yi-Chern | en_US |
dc.contributor.author | Chen, Jen-Hao | en_US |
dc.contributor.author | Tseng, Shi-Chang | en_US |
dc.contributor.author | Liu, Jinn-Liang | en_US |
dc.date.accessioned | 2014-12-08T15:10:26Z | - |
dc.date.available | 2014-12-08T15:10:26Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 1386-9477 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.physe.2008.08.064 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/7964 | - |
dc.description.abstract | Based on the current spin density functional theory and the nonparabolic effective mass approximation, a three-dimensional model is presented to Study the few-electron system in InAs/GaAs quantum dot for which the electron spectra have been obtained from the capacitance-voltage (CV) measurements by Miller et al. [Phys. Rev. B 56 (1997) 6764]. The model is an extension of the single-electron model proposed by Filikhin et al. [Solid State Comm. 140 (2006) 483]. Our results call quantitatively well interpret the experimental CV data. It is shown that the energy differences between the parabolic and nonparabolic approximations are comparable with the exchange-correlation energies, Moreover, the nonparabolic effect is shown to be increasingly more significant than that of parabolic case in higher magnetic fields. It is also more pronounced for larger number of electrons. (C) 2008 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Quantum dots | en_US |
dc.subject | Multi-electron states | en_US |
dc.subject | Coulomb blockade | en_US |
dc.subject | Single-electron tunneling | en_US |
dc.title | The effect of band nonparabolicity on modeling few-electron ground states of charge-tunable InAs/GaAs quantum dot | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.physe.2008.08.064 | en_US |
dc.identifier.journal | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 403 | en_US |
dc.citation.epage | 407 | en_US |
dc.contributor.department | 應用數學系 | zh_TW |
dc.contributor.department | Department of Applied Mathematics | en_US |
dc.identifier.wosnumber | WOS:000263015700014 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |