標題: Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dots
作者: Li, YM
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: computer simulations;magnetic phenomena (cyclotron resonance;phase transitions, etc.);quantum effects;tunneling;indium arsenide;gallium arsenide;heterojunctions
公開日期: 20-九月-2004
摘要: We investigate the transition energy of vertically stacked semiconductor quantum dots with a complete three-dimensional (3D) model in an external magnetic field. In this study, the model formulation includes: (1) the position-dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (2) the position-dependent effective mass Hamiltonian in parabolic approximation for holes, (3) the finite hard-wall confinement potential, and (4) the Ben Daniel-Duke boundary conditions. To solve the nonlinear problem, a nonlinear iterative method is implemented in our 3D nanostructure simulator. For multilayer small InAs/GaAs quantum dots, we find that the electron-hole transition energy is dominated by the number of stacked layers. The inter-distance d plays a crucial role in the tunable states of the quantum dots. Under zero magnetic field for a 10-layer QDs structure with d = 1.0 nm, there is about 30% variation in the electron ground state energy. Dependence of the magnetic field on the electron-hole transition energy is weakened when the number of stacked layers is increased. Our investigation is constructive in studying the magneto-optical phenomena and quantum optical structures. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.susc.2004.06.052
http://hdl.handle.net/11536/26375
ISSN: 0039-6028
DOI: 10.1016/j.susc.2004.06.052
期刊: SURFACE SCIENCE
Volume: 566
Issue: 
起始頁: 1057
結束頁: 1062
顯示於類別:會議論文


文件中的檔案:

  1. 000224238300071.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。