標題: | Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dots |
作者: | Li, YM 友訊交大聯合研發中心 D Link NCTU Joint Res Ctr |
關鍵字: | computer simulations;magnetic phenomena (cyclotron resonance;phase transitions, etc.);quantum effects;tunneling;indium arsenide;gallium arsenide;heterojunctions |
公開日期: | 20-九月-2004 |
摘要: | We investigate the transition energy of vertically stacked semiconductor quantum dots with a complete three-dimensional (3D) model in an external magnetic field. In this study, the model formulation includes: (1) the position-dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (2) the position-dependent effective mass Hamiltonian in parabolic approximation for holes, (3) the finite hard-wall confinement potential, and (4) the Ben Daniel-Duke boundary conditions. To solve the nonlinear problem, a nonlinear iterative method is implemented in our 3D nanostructure simulator. For multilayer small InAs/GaAs quantum dots, we find that the electron-hole transition energy is dominated by the number of stacked layers. The inter-distance d plays a crucial role in the tunable states of the quantum dots. Under zero magnetic field for a 10-layer QDs structure with d = 1.0 nm, there is about 30% variation in the electron ground state energy. Dependence of the magnetic field on the electron-hole transition energy is weakened when the number of stacked layers is increased. Our investigation is constructive in studying the magneto-optical phenomena and quantum optical structures. (C) 2004 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.susc.2004.06.052 http://hdl.handle.net/11536/26375 |
ISSN: | 0039-6028 |
DOI: | 10.1016/j.susc.2004.06.052 |
期刊: | SURFACE SCIENCE |
Volume: | 566 |
Issue: | |
起始頁: | 1057 |
結束頁: | 1062 |
顯示於類別: | 會議論文 |