標題: | Application of Supercritical CO(2) Fluid for Dielectric Improvement of SiO(x) Film |
作者: | Tsai, Chih-Tsung Chang, Ting-Chang Liu, Po-Tsun Cheng, Yi-Li Kin, Kon-Tsu Huang, Fon-Shan 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 1-一月-2009 |
摘要: | In this paper the supercritical carbon dioxide (SCCO(2)) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the treatment of SCCO(2) fluid mixed with ethyl alcohol and pure H(2)O, the oxygen content of SiO(x) film increases and the traps within SiO(x) are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated. |
URI: | http://dx.doi.org/10.1149/1.3028217 http://hdl.handle.net/11536/8000 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.3028217 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 12 |
Issue: | 2 |
起始頁: | H35 |
結束頁: | H37 |
顯示於類別: | 期刊論文 |