標題: Application of Supercritical CO(2) Fluid for Dielectric Improvement of SiO(x) Film
作者: Tsai, Chih-Tsung
Chang, Ting-Chang
Liu, Po-Tsun
Cheng, Yi-Li
Kin, Kon-Tsu
Huang, Fon-Shan
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 1-一月-2009
摘要: In this paper the supercritical carbon dioxide (SCCO(2)) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the treatment of SCCO(2) fluid mixed with ethyl alcohol and pure H(2)O, the oxygen content of SiO(x) film increases and the traps within SiO(x) are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
URI: http://dx.doi.org/10.1149/1.3028217
http://hdl.handle.net/11536/8000
ISSN: 1099-0062
DOI: 10.1149/1.3028217
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 2
起始頁: H35
結束頁: H37
顯示於類別:期刊論文