标题: Time-resolved photoluminescence of isoelectronic traps in ZnSe(1-x)Te(x) semiconductor alloys
作者: Lin, Y. C.
Chou, W. C.
Fan, W. C.
Ku, J. T.
Ke, F. K.
Wang, W. J.
Yang, S. L.
Chen, W. K.
Chang, W. H.
Chia, C. H.
电子物理学系
Department of Electrophysics
公开日期: 15-十二月-2008
摘要: Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe(1-x)Te(x). As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
URI: http://dx.doi.org/10.1063/1.3054162
http://hdl.handle.net/11536/8026
ISSN: 0003-6951
DOI: 10.1063/1.3054162
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 24
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