高功率發光二極體之封裝研究

Abstract

隨著發光二極體亮度的不斷提昇，其應用也隨之多樣化，從早期的指示燈、交通號誌燈到目前手機與液晶電視面板的背光源、車用燈源與未來看好的照明市場，可說為發光二極體產業注入新的生命力。隨著應用領域的多樣化，LED技術主要朝著兩個方向發展，一是晶片（Chip）微型化（Miniaturization），主要應用在手機、相機與筆記型電腦等行動產品上；另一種是晶片高功率大面積化，主要應用在包括液晶電視背光源、投影機燈泡、車用頭燈、建築及室內外照明等市場上。無論是微型化或高功率大面積化晶片，如何改善LED晶片的發光效率以提昇亮度是共同的課題。要增加LED的亮度可以從兩方面著手，一種是增加LED的發光效率，另一種是提高輸入功率。若是要藉由高輸入功率來達到高亮度輸出，則必須要解決LED元件的散熱問題。 在本論文中，針對高功率大面積化發光二極體在高輸入功率來達到高亮度輸出之應用上，本實驗設計一種新的封裝方式來改善LED元件的散熱問題，在考量成本、功能性與取得難易程度後，選擇以矽晶片作為封裝基板，並在矽晶片上設計兩種Layout，以便讓P/N同相與P/N不同相之兩種不同型態；但皆為40mil之Chip可固晶於載板上。在載板製作完成後，將P/N同相與P/N不同相之兩種Chip，分別以陣列方式固晶於所設計之載板上，經過打線並封上矽膠後，再通入20mA∼2A電流以量測其Luminous flux、Vf、Dominate wavelength等資料。

By the increasing of Light output at light-emitting diodes(LED), the LED is beginning to show widespread application on the market. From the indicator light, traffic signal light, backlighting for LCD television and cellphone, car lighting and the market of white light source, it makes a new vitality in the LED industry. With the variety of application area, the LED technology goes toward two direction. One of the application is the chip miniaturization, it is used in the cellphone, digital camera and the Laptop. The other one is the large format panel, it is used to the backlighting for LCD television, lamp of projector, car headlight, architectural and the outdoor lighting. No matter what the chip miniaturization or the large area display, how to improve the light efficiency of LED chip for increasing light intensity is the common topic. To enhance the bright intensity of LED, one is to increase the light efficiency of LED and the other one is to increase the input power. By increasing the input power to achieve high brightness, the adequate heat-sinking is required to be improved. to be improved. In this thesis, we focused on the large area LED in the high input power application. We developed a new package experiment to improve the heat-sinking problem. Based on the cost and functionality, we choose the Silicon for the package substrate. We designed two layout on the Silicon chip in order to fix the same phase P/N and different phase P/N of 40mil chip on the substrate. After we accomplished the substrate, we used array method to fix the two chips and applied the current from 20mA to 2A to measure the Luminous flux、Vf、and Dominate wavelength.