對稱與非對稱絕緣矽金氧半場效電晶體之比較研究

Abstract

本論文系統性地比較對稱(傳統的環繞汲極和源極佈植)與非對稱(只有環繞源極的佈植)部份空乏絕緣矽金氧半場效電晶體的通道工程。探討的部分包含漏電成分、浮體效應、靜態電性和重要的類比參數。研究發現非對稱元件可以應用於改善對稱長通道金氧半場效電晶體元件的輸出阻抗衰減。此輸出阻抗的提升對於浮體元件是更顯著於繫體元件。然而我們的延遲串列量測顯示非對稱部分空乏絕緣矽元件的開關延遲歷史效應較對稱性的嚴重。

This study presents a systematic comparison between symmetric (conventional halo implant at both source and drain side) and asymmetric (halo implant at source side only) channel engineering of partially depleted (PD) SOI MOSFETs. Our investigation includes the leakage components, floating-body effect, electrostatics and important analog metrics. Our study indicates that the asymmetric devices can be used to improve the output resistance (Rout) degradation observed in long-channel symmetric PD SOI MOSFETs. Moreover, the enhancement in the Rout of the floating-body device is more significant than that of the body-tied device. However, our delay-chain measurement shows that the history effect of the switching delay of the asymmetric PD SOI device is worse than that of the symmetric device.