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dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorChang, Ting-en_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorChen, Sheng-Chien_US
dc.contributor.authorLin, Jian-Yangen_US
dc.date.accessioned2014-12-08T15:10:32Z-
dc.date.available2014-12-08T15:10:32Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3039065en_US
dc.identifier.urihttp://hdl.handle.net/11536/8053-
dc.description.abstractAn oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.en_US
dc.language.isoen_USen_US
dc.subjectmetal-insulator boundariesen_US
dc.subjectmolybdenumen_US
dc.subjectmolybdenum compoundsen_US
dc.subjectnanostructured materialsen_US
dc.subjectoxidationen_US
dc.subjectrapid thermal annealingen_US
dc.subjectreduction (chemical)en_US
dc.subjectsemiconductor storageen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleCharge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3039065en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000261430600033-
dc.citation.woscount13-
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