标题: | 射频互补金氧半E类功率放大器设计 RF CMOS Class-E Power Amplifier Design |
作者: | 吴家岱 Ja-Dai Wu 温瓌岸 温文燊 Kuei-Ann Wen Wen-Shen Wuen 电子研究所 |
关键字: | 功率放大器;互补式金氧半;E类;F类;金球互通微波存取;形为模型;极座标发射器;串叠;射频;Power Amplifier;CMOS;Class-E;Class-F;WiMAX;Behavior Model;Polar Transmitter;Cascode;RF;Fully-Integrated;Finite DC-Feed Inductor;Co-Simulation;On-Chip |
公开日期: | 2006 |
摘要: | 本文提出一个完全整合在单一晶片上使用0.13-μm CMOS制程的E类功率放大器,此E类功率放大器结合了F类的前级放大器并采用有限的小面积电感来取代大面积的射频阻隔器以易于整合在单一晶片上。此E类放大器在输入功率为-3dBm、操作频率为2.5GHz之下,可达到21dBm的输出功率和48.4%的功率增加效率,在设计的频带内,2.3GHz~2.7GHz,功率增加效率仍然可以维持在44%以上。且为了增加系统模拟的时间,本文提出此E类功率放大器的形为模型。藉由此形为模型,系统模拟的时间可以减少93%左右。 An on-chip CMOS Class-E Power Amplifier (PA) implemented in 0.13-□m CMOS technology is presented. The Class-E PA includes a Class-F driver and replaces a large RF choke with a small finite dc-feed inductor for on-chip integration. The proposed Class-E PA achieves power added efficiency (PAE) of 48.4 % while delivering 21 dBm output power with the input driving power of -3 dBm at 2.5 GHz. In the design band, 2.3GHz~2.7GHz, PAE is still above 44%. In order to improve the simulation time of RF/Baseband co-simulation the behavior model of proposed PA is presented. The simulation time of RF/Baseband co-simulation can be reduced about 93% by the proposed behavior model. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009411667 http://hdl.handle.net/11536/80580 |
显示于类别: | Thesis |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.