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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.date.accessioned2014-12-08T15:10:33Z-
dc.date.available2014-12-08T15:10:33Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2008.2007077en_US
dc.identifier.urihttp://hdl.handle.net/11536/8065-
dc.description.abstractAs the dimension of semiconductor device shrunk into nanometer scale (nanoscale), characteristic fluctuation is more pronounced, and become crucial for circuit design. In this paper, discrete-dopant-induced characteristic fluctuation of 16-nm-gate metal-oxide-semiconductor field effect transistors (MOSFET) circuit under high-frequency regime is quantitatively studied. The circuit gain, the 3 dB bandwidth and the unity-gain bandwidth of the tested nanoscale transistor circuit are calculated concurrently capturing the discrete-dopant-number- and discrete-dopant-position-induced fluctuations in the large-scale statistically sound "atomistic" device/circuit coupled simulation. For the 16-nm-gate MOSFET circuit, the number of discrete dopants, varying from zero to 14, may result in 5.7% variation of the circuit gain, 14.1% variation of the 3 dB bandwidth, and 10.4% variation of the unity-gain bandwidth. To suppress the high-frequency characteristic fluctuations, an improved doping distribution along the longitudinal diffusion direction from the MOSFET's surface to substrate is further performed to examine the associated fluctuation. The improved vertical doping profile with less dopants locating near surface of channel effectively reduces the fluctuations of the circuit gain, the 3 dB bandwidth and the unity-gain bandwidth dramatically. Compared with the original doping profile, the reduction is 32.3%, 19.4% and 51.8%, respectively. This study provides an insight into random-dopant-induced intrinsic high-frequency characteristic fluctuations and verifies the potential fluctuation suppression technique on high-frequency characteristic fluctuations of nanoscale transistor circuit.en_US
dc.language.isoen_USen_US
dc.subjectCharacteristic fluctuationen_US
dc.subjectfluctuation suppression techniqueen_US
dc.subjecthigh frequencyen_US
dc.subjectmodeling and simulationen_US
dc.subjectnanometer scale metal-oxide-semiconductor field effect transistorsen_US
dc.subject(MOSFET) device and circuiten_US
dc.subjectrandom dopant effecten_US
dc.titleHigh-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopantsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2008.2007077en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume56en_US
dc.citation.issue12en_US
dc.citation.spage2726en_US
dc.citation.epage2733en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000261895200006-
dc.citation.woscount23-
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