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dc.contributor.authorYen, Hsi-Hsuanen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.date.accessioned2014-12-08T15:10:33Z-
dc.date.available2014-12-08T15:10:33Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.8808en_US
dc.identifier.urihttp://hdl.handle.net/11536/8076-
dc.description.abstractIn this study, a GaN-based alternating current light-emitting diode (AC-LED) with 34 numbers of microchips illuminated in each bias direction was fabricated. After calibrating the integration duration, the light output powers of the AC-LED driven by AC and DC were 388.1 and 312.8 mW when the input power was about I W, respectively. The flickering illumination mode of the AC-LED driven by AC decreased the heat accumulation and revealed a higher energy utilization efficiency than that of the AC-LED driven by DC. The larger blue shift and smaller full width at half maximum of the AC-LED driven by AC than those of the AC-LED driven by DC were also observed. [DOI: 10.1143/JJAP.47.8808]en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectlight-emitting diodeen_US
dc.subjectalternating currenten_US
dc.subjectWheatstone Bridgeen_US
dc.titleCharacteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.8808en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue12en_US
dc.citation.spage8808en_US
dc.citation.epage8810en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262111000029-
dc.citation.woscount11-
Appears in Collections:Articles


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