標題: | Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaOx Oxidation |
作者: | Yen, Hsi-Hsuan Kuo, Hao-Chung Yeh, Wen-Yung 光電工程學系 光電工程研究所 Department of Photonics Institute of EO Enginerring |
關鍵字: | Failure analysis;gallium compounds;light-emitting diodes (LEDs);oxidation |
公開日期: | 1-八月-2010 |
摘要: | This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and OH- ions to generate GaOx oxidation grains. The GaOx generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of GaOx dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from -13.1 to -6.7 V with different micro-LEDs array arrangements extended the WB AC-LED life-time from being less than 650 h to more than 1600 h, respectively. |
URI: | http://dx.doi.org/10.1109/LPT.2010.2051424 http://hdl.handle.net/11536/150038 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2010.2051424 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 22 |
起始頁: | 1168 |
結束頁: | 1170 |
顯示於類別: | 期刊論文 |