標題: Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaOx Oxidation
作者: Yen, Hsi-Hsuan
Kuo, Hao-Chung
Yeh, Wen-Yung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: Failure analysis;gallium compounds;light-emitting diodes (LEDs);oxidation
公開日期: 1-Aug-2010
摘要: This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and OH- ions to generate GaOx oxidation grains. The GaOx generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of GaOx dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from -13.1 to -6.7 V with different micro-LEDs array arrangements extended the WB AC-LED life-time from being less than 650 h to more than 1600 h, respectively.
URI: http://dx.doi.org/10.1109/LPT.2010.2051424
http://hdl.handle.net/11536/150038
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2051424
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
起始頁: 1168
結束頁: 1170
Appears in Collections:Articles