完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yen, Hsi-Hsuan | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Yeh, Wen-Yung | en_US |
dc.date.accessioned | 2014-12-08T15:10:33Z | - |
dc.date.available | 2014-12-08T15:10:33Z | - |
dc.date.issued | 2008-12-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.8808 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8076 | - |
dc.description.abstract | In this study, a GaN-based alternating current light-emitting diode (AC-LED) with 34 numbers of microchips illuminated in each bias direction was fabricated. After calibrating the integration duration, the light output powers of the AC-LED driven by AC and DC were 388.1 and 312.8 mW when the input power was about I W, respectively. The flickering illumination mode of the AC-LED driven by AC decreased the heat accumulation and revealed a higher energy utilization efficiency than that of the AC-LED driven by DC. The larger blue shift and smaller full width at half maximum of the AC-LED driven by AC than those of the AC-LED driven by DC were also observed. [DOI: 10.1143/JJAP.47.8808] | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaN | en_US |
dc.subject | light-emitting diode | en_US |
dc.subject | alternating current | en_US |
dc.subject | Wheatstone Bridge | en_US |
dc.title | Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.47.8808 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 8808 | en_US |
dc.citation.epage | 8810 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000262111000029 | - |
dc.citation.woscount | 11 | - |
顯示於類別: | 期刊論文 |