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dc.contributor.author洪瑞易en_US
dc.contributor.authorJui-Yi Hungen_US
dc.contributor.author潘扶民en_US
dc.contributor.authorFu-Ming Panen_US
dc.date.accessioned2014-12-12T03:05:59Z-
dc.date.available2014-12-12T03:05:59Z-
dc.date.issued2006en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009418521en_US
dc.identifier.urihttp://hdl.handle.net/11536/81168-
dc.description.abstract过去数十年来,冷阴极电子场发射元件应用在平面显示器及微波真空微电子技术的潜力受到了许多的注意,其中又以Spindt型场发射体最被学术界广泛的研究。本研究利用奈米多孔性的阳极氧化铝薄膜作为模板辅助制备奈米场发射结构之规则阵列,其奈米场发射结构包含两种型态:其一为TiN奈米柱之场发射阵列;其二为披覆氧化铱电镀膜之Si奈米尖锥阵列。
高规则场发射阵列结构之制备是以TiOx奈米点阵列作为奈米遮罩(nanomask),而TiOx奈米点阵列可直接由铝及氮化钛双层薄膜之阳极氧化处理获得,并藉由阳极氧化铝膜之高规则孔洞分布局限TiOx奈米点阵列之排列。
TiN奈米柱之场发射阵列的制备,是先在矽基材上依序沉积TiN与Al膜,再经由阳极氧化处理获得TiOx奈米点。利用其TiOx奈米点阵列作为nanomask,以活性离子往下蚀刻TiN基材,即能制备出与阳极氧化铝膜之相同孔洞分布的TiN奈米柱之规则阵列。而TiN奈米柱阵列在移除掉顶部的TiOx nanomask之后,其顶端会呈现有环状尖锐形貌的结构。在真空度为10-6torr环境下量测TiN奈米柱阵列之场发射性质,发现其场发射阵列具有低起始电压,以及非线性F-N图形之场发射特性。我们认为其非线性之场发射特性归因于顶端之环状尖锐形貌先产生场发射电流的关系。
Si奈米尖锥阵列与TiN奈米柱阵列有相似之制备方式,其中的差异在于TiN的厚度较薄。在移除掉上层的阳极氧化铝膜后,在高密度电浆之活性离子蚀刻系统中先以TiOx奈米点阵列作为nanomask,对TiN层进行离子性蚀刻,接着以残留的TiN奈米柱阵列作为nanomask,并使用不同的蚀刻气体对Si层进行离子性蚀刻,即能制备出Si奈米尖锥阵列。为了使场发射源具有较稳定的场发射特性,以脉波电镀法沉积IrO2至Si奈米尖锥表面上。场发射源的尖端半径及形貌取决于电镀条件,如脉波波形、周期、操作电流。我们并研究披覆氧化铱电镀膜之Si奈米尖锥阵列的场发射特性,发现其奈米结构与纯Si奈米尖锥相较之下,有较好的场发射性能。
zh_TW
dc.description.abstractFor the past two decades, electron field emission devices have attracted much attention because of their potential applications for cold cathode flat panel display and vacuum microwave devices. Among various electron field emitters, the Spindt type microfabricated emitter has been extensively investigated for applications of the cold cathode field emitter. In this study, we fabricated highly ordered nanostructured field emitter array using porous anodic aluminum oxide (AAO) as the template. Two types of nanostructured field emitters were prepared: the titanium nitride (TiN) nanopillar emitter array and the iridium oxide (IrO2) coated Si nanocone emitter array.
In order to fabricate ordered emitter array, a TiOx nanodot array was first prepared as the nanomask for subsequent fabrication of nanoemitters. The AAO template was used to regulate the formation arrangement of the TiOx nanomaks, with which nanoemitters were then fabricated using conventional integrated circuit process technology.
For fabrication of the TiN nanopillar emitter array, TiN and Al were sequentially sputter-deposited on the Si substrate followed by electrochemical anodization of the film stack, thereby the TiOx nanodot array was produced. After reactive-ion-etching the underlying TiN layer using the TiOx nanodots as the mask, TiN nanopillars can be formed with a pattern arrangement in compliant with the AAO pattern. The TiN nanopillars had a ridge-shaped edge on the top after the removal of the TiOx nanomasks. Field emission characteristics of the TiN nanopillar array were studied under a vacuum condition of 10-6 torr. The TiN nanopillars emitters had a very low turn-on voltage while the Fowler-Nordheim plot showed a nonlinear field-emission behavior. The nonlinearity was ascribed to that the ridge-shaped top edge produced field emission before the rest of the emitting area.
For fabrication of Si nanocone emitters, similar processes were performed as the fabrication processes of the TiN nanopillars excepted for the thinner thickness of the TiN film. After removal of the AAO template, the TiOx nanodots and the remanent TiN thin film were subject to reactive-ion-etching processes, and the formed TiN nanopillars were used as the mask to prepare the Si nanocone array in a high-density-plasma-reactive-ion-etching (HDP-RIE) system. In order to obtain chemically stable field emitters with a high field-emission efficiency, IrO2 was deposited on the Si nanocones by pulsed anodic electrodeposition. The tip radius and the sharpness of the field emitter were highly dependent on the electrodeposition conditions, such as the pulse waveform, period and the applied current. Field emission characteristics of the IrO2 coated Si nanocone array were also studied, and showed a better field emission performance than that of the bare Si nanocone emitter array.
en_US
dc.language.isozh_TWen_US
dc.subject电子场发射zh_TW
dc.subject矽奈米尖锥zh_TW
dc.subject阳极氧化铝zh_TW
dc.subjectelectron field emissionen_US
dc.subjectSilicon nanoconeen_US
dc.subjectAnodic Aluminum Oxideen_US
dc.title利用阳极氧化铝制备奈米结构电子场发射源zh_TW
dc.titleNanostructures Fabricated by Anodic Aluminum Oxide (AAO) Templation Method for Electron Field Emission Applicationsen_US
dc.typeThesisen_US
dc.contributor.department材料科学与工程学系zh_TW
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