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dc.contributor.author羅世儒en_US
dc.contributor.author吳樸偉en_US
dc.date.accessioned2014-12-12T03:06:00Z-
dc.date.available2014-12-12T03:06:00Z-
dc.date.issued2006en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009418524en_US
dc.identifier.urihttp://hdl.handle.net/11536/81171-
dc.description.abstract以diamino-triazole、amino-mercapto-thiazol、以及2,5-dimmercapto-1,3,4-thiadiazole三者作為微尺寸銅電鍍的抑制劑,並在具備120nm溝渠的矽晶圓基板上電鍍銅並且觀察添加劑對填孔能力的影響,同時探討銅層的平整度和導電度。其中以diamino-triazole表現最好,可以達成IBM理論中所謂“superfilling”的效果。 利用無電鍍的方法在高深寬比的陽極氧化鋁的孔洞陣列中生長厚度為20nm左右的銅層以期長成連續的銅管,從表面形貌、成分分析以及導電度的量測來了解奈米尺度下銅層的形貌。zh_TW
dc.language.isozh_TWen_US
dc.subject電鍍zh_TW
dc.subject無電鍍zh_TW
dc.subject添加劑zh_TW
dc.subject填孔zh_TW
dc.subjectzh_TW
dc.subjectelectroplatingen_US
dc.subjectelectrodepositionen_US
dc.subjectelectrolessen_US
dc.subjectadditivesen_US
dc.subjectfillingen_US
dc.subjectcopperen_US
dc.title添加劑對電鍍銅填孔力之影響及利用無電鍍銅製作奈米銅層zh_TW
dc.titleEffects of Additives on Filling Performance in Copper Electroplating and Conformal Copper Deposition in High-Aspect Ratio Trenches by Electroless Platingen_US
dc.typeThesisen_US
dc.contributor.department材料科學與工程學系zh_TW
Appears in Collections:Thesis


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