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dc.contributor.authorChen, Jem-Kunen_US
dc.contributor.authorHsieh, Chih-Yien_US
dc.contributor.authorHuang, Chih-Fengen_US
dc.contributor.authorLi, P. -M.en_US
dc.contributor.authorKuo, Shiao-Weien_US
dc.contributor.authorChang, Feng-Chihen_US
dc.date.accessioned2014-12-08T15:10:37Z-
dc.date.available2014-12-08T15:10:37Z-
dc.date.issued2008-11-25en_US
dc.identifier.issn0024-9297en_US
dc.identifier.urihttp://dx.doi.org/10.1021/ma801127men_US
dc.identifier.urihttp://hdl.handle.net/11536/8132-
dc.description.abstractIn this paper we describe a graft polymerization/solvent immersion method for generating various patterns of polymer brushes. We used a very-large-scale integration (VLSI) process to generate well-defined patterns of polymerized methyl methacrylate (MMA) on patterned Si(100) surfaces. A monolayer of Si(CH3)(3) groups was first generated to form an inert surface by reacting a hydroxylated Si surface with hexamethyldisilazane in a thermal evaporator. Oxygen plasma was the used to reactivate the patterned surface under a duty ratio of 1: 1 using electron beam lithography. The surface-generated oxygen species, such as Si-O and Si-O-O, reacted with the initiator for atom transfer radical polymerization (ATRP) on the patterned hydroxylated surface. The ATRP initiator on the patterned surface was then used for the graft polymerization of MMA to prepare the PMMA brushes. After immersion of wafers presenting lines and dots of these PMMA brushes in water and tetrahydrofuran, we observed mushroom- and brush-like regimes, respectively, for the PMMA brushes with various pattern resolutions.en_US
dc.language.isoen_USen_US
dc.titleUsing Solvent Immersion to Fabricate Variably Patterned Poly(methyl methacrylate) Brushes on Silicon Surfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/ma801127men_US
dc.identifier.journalMACROMOLECULESen_US
dc.citation.volume41en_US
dc.citation.issue22en_US
dc.citation.spage8729en_US
dc.citation.epage8736en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000261003700064-
dc.citation.woscount47-
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