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dc.contributor.authorChan, Yun-Peien_US
dc.contributor.authorLin, Ja-Honen_US
dc.contributor.authorHsu, Chih-Changen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:10:38Z-
dc.date.available2014-12-08T15:10:38Z-
dc.date.issued2008-11-24en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.16.019900en_US
dc.identifier.urihttp://hdl.handle.net/11536/8138-
dc.description.abstractNonlinear optical absorption of ZnO thin film grown by the laser molecular beam epitaxy was investigated by the Z-scan method using a frequency-doubled femtosecond Ti:sapphire laser. Due to near-exciton resonance, an enormous enhancement of two photon absorption (TPA) is about 3000 cm/GW at 390 nm which is about 6.5 times larger than the previously reported at two-photon exciton resonance in near-IR regime and 710 times larger than that of ZnO bulk measured at 532 nm. Besides, the free-carrier absorption resulting from linear absorption and TPA becomes essential when the excitation approaches the exciton resonance. (C) 2008 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleNear-resonant high order nonlinear absorption of ZnO thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.16.019900en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume16en_US
dc.citation.issue24en_US
dc.citation.spage19900en_US
dc.citation.epage19908en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000261561900051-
dc.citation.woscount20-
Appears in Collections:Articles


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